SEMIEMPIRICAL MODEL OF COVALENT BONDING IN SILICON

被引：33

作者：

ACKLAND, G

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.40.10351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：10351 / 10355

页数：5

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共 38 条

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[8] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON
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[10] LATTICE-DYNAMICS OF SILICON WITH EMPIRICAL MANY-BODY POTENTIALS
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