INFLUENCE OF HYDROGEN ON ELECTRICAL CHARACTERISTICS OF POLY-SI RESISTOR

被引：19

作者：

NAKABAYASHI, M ^{[1
]}

IKEGAMI, M ^{[1
]}

DAIKOKU, T ^{[1
]}

机构：

[1] KYOEI SANGYO CORP,IC DESIGN CTR,KAWANISHI 666,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期

关键词：

POLYCRYSTALLINE SILICON; HYDROGEN; ERDA;

D O I：

10.1143/JJAP.32.3734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper shows that different amounts of hydrogen are absorbed into polycrystalline silicon (Poly-Si) film depending on its Structures such as oxide film under Poly-Si film and metallization pattern on Poly-Si film. We examined how hydrogen affected the conductive mechanism of Poly-Si film, and measured the absorption of hydrogen into Poly-Si film by elastic recoil detection analysis (ERDA). Our investigations revealed that the change in Poly-Si film resistance was caused by a decrease in trap density, which occurred when dangling bonds were filled with hydrogen. This hydrogen was due to diffusion of hydrogen in plasma-enhanced chemical-vapor-deposited silicon nitride (P-SiN) film. It was confirmed that the absorption of hydrogen was the cause of the decrease in resistance using ERDA.

引用

页码：3734 / 3738

页数：5

共 5 条

[1] POLYSILICON RESISTOR MODIFICATION WITH HYDROGEN PLASMAS ON FABRICATED INTEGRATED-CIRCUITS [J].