ANNEALING EFFECT ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS PASSIVATED WITH PLASMA-DEPOSITED SILICON-NITRIDE FILMS

被引：4

作者：

SAITO, Y ^{[1
]}

IIO, N ^{[1
]}

KAMESHIMA, Y ^{[1
]}

TAKEDA, R ^{[1
]}

KUWANO, H ^{[1
]}

机构：

[1] KEIO UNIV,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1117 / 1120

页数：4

共 13 条

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[9] CONDUCTION MECHANISM OF HIGH-RESISTIVITY POLYCRYSTALLINE SILICON FILMS [J].

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[10]

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