THEORY OF D- STATES IN GE AND SI

被引：7

作者：

CHANG, YC ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.25.3927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3927 / 3944

页数：18

共 28 条

[21] OPTICAL DETERMINATION OF GROUND-STATE SPLITTINGS OF GROUP V IMPURITIES IN GERMANIUM [J].

REUSZER, JH ;

FISHER, P .

PHYSICAL REVIEW, 1964, 135 (4A) :1125-+

[22]

ROSE ME, 1957, ELEMENTARY THEORY AN, pCH3

[23] LOCALIZED STATES IN SEMICONDUCTORS - ISOCORIC IMPURITIES IN SI AND GE [J].

SARKER, AQ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (14) :2617-2632

[24] FORMATIONS OF D- COMPLEXES AND D- BAND IN GERMANIUM [J].

TANIGUCHI, M ;

NARITA, S ;

HASEGAWA, N ;

KOBAYASHI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (02) :545-552

[25] D-STATE IN SILICON [J].

TANIGUCHI, M ;

NARITA, S .

SOLID STATE COMMUNICATIONS, 1976, 20 (02) :131-133

[26] D- STATES IN GERMANIUM [J].

TANIGUCHI, M ;

NARITA, SI .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (04) :1262-1269

[27] VERY SHALLOW TRAPPING STATE IN DOPED GERMANIUM [J].

TANIGUCHI, M ;

HIRANO, M ;

NARITA, S .

PHYSICAL REVIEW LETTERS, 1975, 35 (16) :1095-1098

[28]

ZIMAN JM, 1971, PRINCIPLES THEORY SO, pCH5

← 1 2 3 →