CHARACTERIZATION OF P-CUGA0.25IN0.75SE2 N-ZN0.35CD0.65S POLYCRYSTALLINE THIN-FILM HETEROJUNCTIONS

被引：1

作者：

APARNA, Y

NAIDU, BS

REDDY, PJ

机构：

[1] Department of Physics, Sri Venkateswara University, Tirupati

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; OPTICAL PROPERTIES; SEMICONDUCTORS; SOLAR CELLS;

D O I：

10.1016/0040-6090(94)90296-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline thin film n-Zn0.35Cd0.65S/(p)-CuGa0.25In0.75Se2 heterojunctions were fabricated and the current density-voltage, capacitance-voltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 425 mV, a short-circuit current density of 30 mA cm(-2) and an electrical conversion efficiency of 8.8% have been obtained for a cell with an active area of 1 cm(2) under a solar input of 85 mW cm(-2).

引用

页码：67 / 71

页数：5

共 28 条

[1] PHOTOVOLTAIC PERFORMANCE OF N-CDS/P-CUGA0.25IN0.75SE2 THIN-FILM HETEROJUNCTIONS [J].