PERIODIC MOTION OF THE CRYSTALLIZATION FRONT DURING BEAM ANNEALING OF SI FILMS

被引：27

作者：

LEMONS, RA

BOSCH, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：343 / 345

页数：3

共 16 条

[1] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].

BIEGELSEN, DK ;

JOHNSON, NM ;

BARTELINK, DJ ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152

[2] CRYSTALLIZATION-FRONT VELOCITY DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS [J].

CHAPMAN, RL ;

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :292-295

[3] SURFACE RIPPLING INDUCED IN THIN-FILMS BY A SCANNING LASER [J].

CLINE, HE .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :443-448

[4] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J].

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP ;

CHAPMAN, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :158-161

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[6] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[7] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

[8] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON [J].

GIBBONS, JF ;

LEE, KF .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :117-118

[9] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J].

KAMINS, TI ;

PIANETTA, PA .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :214-216

[10] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J].

LAM, HW ;

TASCH, AF ;

HOLLOWAY, TC .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :206-208

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