SURFACE RIPPLING INDUCED IN THIN-FILMS BY A SCANNING LASER

[1] INTERFERENCE EFFECTS ON THE SURFACE OF ND - YAG-LASER-REACTED PD-SILICIDE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 559 - 561

[2] SURFACE RIPPLING INDUCED BY SURFACE-TENSION GRADIENTS DURING LASER SURFACE MELTING AND ALLOYING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3888 - 3894

[3] BATCHELOR GK, 1970, INTRO FLUID DYNAMICS, P183

[4] CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[7] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[8] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[9] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 453 - 455

[10] HEAT-TRANSFER MODEL FOR CW LASER MATERIAL PROCESSING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 941 - 947

[1] INTERFERENCE EFFECTS ON THE SURFACE OF ND - YAG-LASER-REACTED PD-SILICIDE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 559 - 561

[2] SURFACE RIPPLING INDUCED BY SURFACE-TENSION GRADIENTS DURING LASER SURFACE MELTING AND ALLOYING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3888 - 3894

[3] BATCHELOR GK, 1970, INTRO FLUID DYNAMICS, P183

[4] CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[7] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[8] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[9] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 453 - 455

[10] HEAT-TRANSFER MODEL FOR CW LASER MATERIAL PROCESSING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 941 - 947