DETERMINATION OF LIFETIME AND DIFFUSION CONSTANT OF MINORITY-CARRIERS BY A PHASE-SHIFT TECHNIQUE USING AN ELECTRON-BEAM-INDUCED CURRENT

被引：21

作者：

FUYUKI, T

MATSUNAMI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3428 / 3432

页数：5

相关论文

共 31 条

[1] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].

BERZ, F ;

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445

[2] CATHODOLUMINESCENCE MEASUREMENTS OF MINORITY-CARRIER LIFETIME IN SEMICONDUCTORS [J].

BOULOU, M ;

BOIS, D .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4713-4721

[3] KINETICS OF RECOMBINATION IN NITROGEN-DOPED GAP [J].

DAPKUS, PD ;

HACKETT, WH ;

LORIMOR, OG ;

BACHRACH, RZ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4920-4930

[4] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

KRESSEL, H ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[5] THE INFLUENCE OF THE GENERATION VOLUME OF MINORITY-CARRIERS ON EBIC [J].

FUYUKI, T ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) :1093-1100

[6] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

HACKETT, WH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&

[7]

HUNTER DR, 1973, SCANNING ELECTRON MI, P208

[8] DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4408-&

[9] THEORY OF LIFETIME MEASUREMENTS IN THIN SEMICONDUCTOR LAYERS WITH THE SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS [J].

JAKUBOWICZ, A .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :635-639

[10] THEORY OF DIFFUSION CONSTANT RECOMBINATION, LIFETIME RECOMBINATION AND SURFACE RECOMBINATION VELOCITY - MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE [J].

KAMM, JD ;

BERNT, H .

SOLID-STATE ELECTRONICS, 1978, 21 (07) :957-964

← 1 2 3 4 →