THEORY OF LIFETIME MEASUREMENTS IN THIN SEMICONDUCTOR LAYERS WITH THE SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS

被引：18

作者：

JAKUBOWICZ, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 06期

关键词：

D O I：

10.1016/0038-1101(80)90048-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：635 / 639

页数：5

共 17 条

[1]

ABRAMOWITZ A, 1965, HDB MATH FUNCTIONS

[2]

Bellman R., 1966, NUMERICAL INVERSION, DOI DOI 10.2307/2004790

[3] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].

BERZ, F ;

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445

[4]

BRESSE JF, 1972, 5TH P ANN SEM S, P105

[5] RESPONSE OF SI AND GAP P-N JUNCTIONS TO A 5- TO 40-KEV ELECTRON BEAM [J].

CZAJA, W .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4236-&

[6] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

HACKETT, WH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&

[7] MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE [J].

HIGUCHI, H ;

TAMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) :316-+

[8] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539

[9] THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS [J].

KUIKEN, HK .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :447-450

[10] EFFECT OF SPOT SIZE ON DETERMINATION OF DIFFUSION LENGTH OF MINORITY-CARRIERS IN P-N-JUNCTIONS USING SCANNED LIGHT-BEAM OR ELECTRON-BEAM TECHNIQUES [J].

LENGYEL, G .

SOLID-STATE ELECTRONICS, 1974, 17 (05) :510-512

← 1 2 →