SEQUENTIAL-ION-IMPLANTATION SYNTHESIS OF TERNARY METAL SILICIDES

被引:16
作者
TAN, ZQ
NAMAVAR, F
HEALD, SM
BUDNICK, JI
机构
[1] SPIRE CORP,BEDFORD,MA 01730
[2] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06269
[3] UNIV CONNECTICUT,DEPT PHYS,STORRS,CT 06269
关键词
D O I
10.1063/1.109909
中图分类号
O59 [应用物理学];
学科分类号
摘要
By implanting two different metals in sequence into Si(100), we find that new ternary silicides can by synthesized with simple binary silicide structures. The synthesis of CoSi2-type (Co,Fe)Si2, and CoSi-type (Co,Fe)Si and (Fe,Ni)Si is demonstrated. The structure is largely determined by the first implanted metal and the total dose of the two metals, allowing one to design the structure of the ternary silicide. The two implanted species occupy equivalent positions in the same structure and the metal composition may be continuously varied in a given structure. This opens new possibilities for the synthesis of ternary and multinary compounds and alloys.
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页码:791 / 793
页数:3
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