ION-BEAM SYNTHESIS OF A SI/BETA-FESI2/SI HETEROSTRUCTURE

被引：56

作者：

OOSTRA, DJ

VANDENHOUDT, DEW

BULLELIEUWMA, CWT

NABURGH, EP

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion-beam synthesis of a buried beta-FeSi2 layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450-keV Fe+ ions. Samples have been analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Annealing at 900-degrees-C of samples implanted with 6 x 10(17) Fe+ /cm2 causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5-mu-m. The epitaxy of beta-FeSi2 (110) and/or (101) planes parallel to the Si(111) substrate plane is observed.

引用

页码：1737 / 1739

页数：3

共 13 条

[1] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS
BOST, MC
MAHAN, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2696 - 2703
[2] SEMICONDUCTING SILICIDE-SILICON HETEROJUNCTION ELABORATION BY SOLID-PHASE EPITAXY
CHERIEF, N
DANTERROCHES, C
CINTI, RC
TAN, TAN
DERRIEN, J
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1671 - 1673
[3] ELECTRONIC-STRUCTURE OF BETA-FESI2
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7148 - 7153
[4] ION-BEAM SYNTHESIS OF COBALT SILICIDE - EFFECT OF IMPLANTATION TEMPERATURE
DEKEMPENEER, EHA
OTTENHEIM, JJM
VANDENHOUDT, DEW
BULLELIEUWMA, CWT
LATHOUWERS, EGC
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) : 769 - 772
[5] ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS
DIMITRIADIS, CA
WERNER, JH
LOGOTHETIDIS, S
STUTZMANN, M
WEBER, J
NESPER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1726 - 1734
[6] ABINITIO BAND-STRUCTURE CALCULATION OF THE SEMICONDUCTOR BETA-FESI2
EPPENGA, R
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 3027 - 3029
[7] SOME STRUCTURAL, ELECTRICAL AND OPTICAL INVESTIGATIONS ON A NEW AMORPHOUS MATERIAL - FESI2
GESERICH, HP
SHARMA, SK
THEINER, WA
[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (04): : 1001 - 1007
[8] EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON
MAHAN, JE
GEIB, KM
ROBINSON, GY
LONG, RG
YAN, XH
BAI, G
NICOLET, MA
NATHAN, M
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (21) : 2126 - 2128
[9] OOSTRA DJ, UNPUB
[10] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

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