ION-BEAM SYNTHESIS OF A SI/BETA-FESI2/SI HETEROSTRUCTURE

被引：56

作者：

OOSTRA, DJ

VANDENHOUDT, DEW

BULLELIEUWMA, CWT

NABURGH, EP

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion-beam synthesis of a buried beta-FeSi2 layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450-keV Fe+ ions. Samples have been analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Annealing at 900-degrees-C of samples implanted with 6 x 10(17) Fe+ /cm2 causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5-mu-m. The epitaxy of beta-FeSi2 (110) and/or (101) planes parallel to the Si(111) substrate plane is observed.

引用

页码：1737 / 1739

页数：3