SYNTHESIS OF NISI2 BY 6 MEV NI IMPLANTATION INTO SILICON

[1] Baglin JEE, 1980, THIN FILM INTERFACES, P341

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[4] DOLATA R, UNPUB

[5] MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 760 - 764

[6] COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (04): : 465 - 485

[7] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[8] EVIDENCE FOR SI DIFFUSION THROUGH EPITAXIAL NISI2 GROWN ON SI(111) [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1257 - 1259

[9] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[10] LINDNER JKN, 1988, PHYS RES, V8, P155

[1] Baglin JEE, 1980, THIN FILM INTERFACES, P341

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[4] DOLATA R, UNPUB

[5] MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 760 - 764

[6] COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (04): : 465 - 485

[7] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[8] EVIDENCE FOR SI DIFFUSION THROUGH EPITAXIAL NISI2 GROWN ON SI(111) [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1257 - 1259

[9] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[10] LINDNER JKN, 1988, PHYS RES, V8, P155