SILANE PLASMA AND SURFACE PROCESSES IN AMORPHOUS-SILICON DEPOSITION

被引：9

作者：

HATA, N

TANAKA, K

机构：

[1] Electrotechnical Lab, Sakura-mura, Jpn, Electrotechnical Lab, Sakura-mura, Jpn

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

HYDROGEN INORGANIC COMPOUNDS - PLASMAS - SEMICONDUCTING FILMS - Amorphous - SILICON AND ALLOYS - Thin Films;

D O I：

10.1016/0022-3093(85)90775-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to understand plasma physics and surface processes in amorphous silicon deposition, coherent anti-Stokes Raman spectroscopy as well as laser-induced fluorescence and plasma-optical-emission techniques are employed to measure species distribution in the bulk plasma as well as the space close to the substrate. Electron distribution and desorption of hydrogen molecules from the substrate surface are discussed.

引用

页码：777 / 780

页数：4

共 6 条

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[2]

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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :649-657

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