2-DIMENSIONAL ELECTRON-TRANSPORT IN SELECTIVELY DOPED N-ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES

被引：10

作者：

BHATTACHARYYA, K

ORWA, JO

GOODNICK, SM

机构：

[1] Department of Electrical and Computer Engineering, Oregon State University, Corvallis

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.352777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.

引用

页码：4396 / 4403

页数：8

共 28 条

[21] DETERMINATION OF THE ATOMIC CONFIGURATION AT SEMICONDUCTOR INTERFACES [J].