PHOTOABLATION - SCHOTTKY BARRIERS ON PATTERNED SI SURFACES

Easy to make, patterned, Schottky barriers are investigated. In particular, the following aspects have been considered: the patterning technique, the electrical barrier height, and potential usage as solar cells. Patterning of the Si surfaces was achieved by photoablation process using an UV excimer laser in a presence of various solutions. Using a 5 mW red HeNe laser launched at various angles on the Si surface we have found that patterned solar cells ablated with 2:3:100 of HF:HNO3:H2O were as much as 23% more efficient than nonpatterned cells. © 1995 American Institute of Physics.