INFLUENCE OF HYDROGEN PARTIAL-PRESSURE ON DEPOSITION AND PROPERTIES OF SPUTTERED AMORPHOUS GALLIUM-ARSENIDE

[1] CARLSON DE, 1979, AMORPHOUS SEMICONDUC, P294

[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[3] DAVIS EA, 1973, AMORPHOUS SEMICONDUC

[4] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[5] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[6] LOEB LB, 1961, BASIC PROCESSES GASE, P698

[7] LOFERSKI JJ, 1972, PRINCIPLES PHOTOVOLT

[8] PAUL W, 1976, SOLID STATE COMMUN, V20, P989

[9] PAUL W, 1977, 7TH P INT C AM LIQ S, P467

[10] AUTOMATIC EVALUATION OF OPTICAL-CONSTANTS AND THICKNESS OF THIN-FILMS - APPLICATION TO THIN DIELECTRIC LAYERS [J]. NOUVELLE REVUE D OPTIQUE, 1976, 7 (06): : 353 - 362

[1] CARLSON DE, 1979, AMORPHOUS SEMICONDUC, P294

[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[3] DAVIS EA, 1973, AMORPHOUS SEMICONDUC

[4] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[5] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[6] LOEB LB, 1961, BASIC PROCESSES GASE, P698

[7] LOFERSKI JJ, 1972, PRINCIPLES PHOTOVOLT

[8] PAUL W, 1976, SOLID STATE COMMUN, V20, P989

[9] PAUL W, 1977, 7TH P INT C AM LIQ S, P467

[10] AUTOMATIC EVALUATION OF OPTICAL-CONSTANTS AND THICKNESS OF THIN-FILMS - APPLICATION TO THIN DIELECTRIC LAYERS [J]. NOUVELLE REVUE D OPTIQUE, 1976, 7 (06): : 353 - 362