INGAP/GAAS BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOMBE

被引：45

作者：

REN, F

ABERNATHY, CR

PEARTON, SJ

WISK, PW

ESAGUI, R

机构：

[1] AT&T Bell Laboratories, New Jersey 07974, Murray Hill

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 12期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXIAL GROWTH;

D O I：

10.1049/el:19920726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon-doped based InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported. Large area devices (emitter diameter 70-mu-m) exhibited gain of 25 for high injection levels at a base doping of 5 x 10(19) cm-3. Ideality factors (<1.1) were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double (DHBT) heterojunction devices. V(ceo)s of 12 and 19 V for SHBTs and DHBTs, respectively, were measured.

引用

页码：1150 / 1152

页数：3

共 6 条

[1] HEAVILY DOPED BASE GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY [J].