HEAVILY DOPED BASE GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：31

作者：

ALEXANDRE, F

BENCHIMOL, JL

DANGLA, J

DUBONCHEVALLIER, C

AMARGER, V

机构：

[1] Centre National d'Etude des Télécommunications, Laboratorie de Bagneux, Bagneux, 196 Avenue Henri Ravera

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

Semiconductor devices and materials;

D O I：

10.1049/el:19901126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 x 1019cm-3. The base sheet resistance of 140Ω/⁊ is among the lowest reported values. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：1753 / 1755

页数：3

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