ELECTRICAL CHARACTERIZATION OF THE P-TYPE DOPANT DIFFUSION OF HIGHLY DOPED ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD

被引：16

作者：

DANGLA, J

DUBONCHEVALLIER, C

FILOCHE, M

AZOULAY, R

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, 196 avenue Henri-Ravera

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Diffusion; Doping;

D O I：

10.1049/el:19900687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The emitter base threshold voltage is found to be a very efficient method of characterising p-type dopant diffusion in highly doped heterojunction bipolar transistors. Simulated curves have been successfully used to determine the amount of diffusion at different doping levels, showing the ability of MOCVD to achieve a high base doping level without any dopant diffusion. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1061 / 1063

页数：3

共 6 条

[1]

AZOULAY R, IN PRESS APPL PHYS L

[2] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].