GAAS-ALGAAS HBT WITH CARBON DOPED BASE LAYER GROWN BY MOMBE

The first demonstration of GaAs/AlGaAs HBTs grown completely by metal organic molecularbeam epitaxy (MOMBE) is reported. The The p-typedopant used for the base layer was carbon. Tin was used as the n-type dopant for the emitter as well as the collector. A common-emitter current gain of 140 was measured for 90 µm diameter devices with a base doping of 1 × 1019cm-3. Small area (2 × 6µm2), devices show a current gain cut-off frequency of ~40 GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.