ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY

被引：215

作者：

ABERNATHY, CR

PEARTON, SJ

CARUSO, R

REN, F

KOVALCHIK, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1750 / 1752

页数：3

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