AUTODOPING EFFECTS OF GE IN VAPOR-GROWN GAAS1-XPX LAYERS ON GE SUBSTRATES

被引：6

作者：

KASANO, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 08期

关键词：

D O I：

10.1016/0038-1101(73)90098-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：913 / 920

页数：8

共 17 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[2] BURMEIST.RA, 1969, T METALL SOC AIME, V245, P565
[3] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[4] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592
[5] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP
GERSHENZON, M
TRUMBORE, FA
MIKULYAK, RM
KOWALCHIK, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 486 - +
[6] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[7] AUTODOPING EFFECTS OF GE IN VAPOR-GROWN GAP LAYERS ON GE SUBSTRATES
KASANO, H
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1792 - &
[8] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS
KRESSEL, H
HAWRYLO, FZ
LEFUR, P
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4059 - +
[9] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT
LUTHER, LC
ROCCASECCA, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 850 - +
[10] A STUDY OF HCL-H-2 AND GECL4-H-2 ETCHING OF GERMANIUM SUBSTRATES FOR EPITAXIAL DEPOSITION
MILLER, KJ
GRIECO, MJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1099 - 1101

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