LARGE INDUCED ABSORPTION CHANGE IN POROUS SILICON AND ITS APPLICATION TO OPTICAL LOGIC GATES

被引：27

作者：

MATSUMOTO, T ^{[1
]}

HASEGAWA, N ^{[1
]}

TAMAKI, T ^{[1
]}

UEDA, K ^{[1
]}

FUTAGI, T ^{[1
]}

MIMURA, H ^{[1
]}

KANEMITSU, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1A期

关键词：

POROUS SILICON; ABSORPTION; NONLINEAR; LOGIC GATE; INVERTER; NOR;

D O I：

10.1143/JJAP.33.L35

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large optically induced absorption change was observed in porous silicon. The relative intensity change of the transmitted beam is on the order of 50%. Using this phenomenon, we have demonstrated all-optical logic gates such as inverters or NOR functions. These results point to the possibility of fabricating all-optical integrated circuits on a Si substrate.

引用

收藏

页码：L35 / L36

页数：2

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