GROWTH OF GAASN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING PLASMA-CRACKED N-2

GaAsN epitaxial layers were grown on GaAs substrates by plasma-assisted low-pressure metalorganic chemical vapor deposition (MOCVD). Pure N-2 gas, which is neither corrosive nor toxic, was chosen as the safest nitrogen precursor. More nitrogen atoms were incorporated from plasma-cracked N-2 than from plasma-cracked NH3 indicating that N-2 is better precursor for GaAsN growth. Photoluminescence from GaAsN was red-shifted with increasing nitrogen concentration. No significant difference was observed in the photoluminescence results between GaAsN layers grown using the two precursors.