RED SHIFT OF PHOTOLUMINESCENCE AND ABSORPTION IN DILUTE GAASN ALLOY LAYERS

被引：620

作者：

WEYERS, M ^{[1
]}

SATO, M ^{[1
]}

ANDO, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 7A期

关键词：

GAAS; GAN; GAASN; ALLOY SEMICONDUCTOR; BANDGAP; PHOTOLUMINESCENCE; ABSORPTION; NITROGEN DOPING;

D O I：

10.1143/JJAP.31.L853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the first report on the optical properties of dilute GaAS1-xNx alloys (0<x<0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the phoyoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.

引用

页码：L853 / L855

页数：3

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