MINORITY ELECTRON-TRANSPORT PROPERTY IN P-GAAS UNDER HIGH ELECTRIC-FIELD

Time-of-flight and photoluminescence measurements are performed for p-GaAs samples at room temperature to investigate minority electron transport properties under high electric field. Reduction of drift velocity, absence of negative differential resistance, and thermally nonequilibrium states between electrons and holes were observed. These features were different from those for majority electrons and indicate strong dependence on hole concentration. Through studies of the energy loss rate and energy and momentum relaxation times, and by performing Monte Carlo calculations including electron-hole interaction, it is clarified that the energy and momentum transfers by electron-hole interaction have significant effects on minority electron transport property.