ELECTRON-MOBILITY IN P-TYPE GAAS

被引：49

作者：

NATHAN, MI ^{[1
]}

DUMKE, WP ^{[1
]}

WRENNER, K ^{[1
]}

TIWARI, S ^{[1
]}

WRIGHT, SL ^{[1
]}

JENKINS, KA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：654 / 656

页数：3

共 12 条

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[2]

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[6] MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GAAS AND GAAS1-XPX WITH AN INTENSITY-MODULATED ELECTRON-BEAM [J].

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SOLID-STATE ELECTRONICS, 1982, 25 (04) :295-&

[7] ELECTRON TRANSPORT IN GAAS [J].

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[8]

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[9]

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[10]

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