ON THE TEMPERATURE-DEPENDENCE OF MAJORITY CARRIER TRANSPORT IN HEAVILY ARSENIC-DOPED POLYCRYSTALLINE SILICON THIN-FILMS

被引：9

作者：

CRESSLER, JD

HWANG, W

CHEN, TC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096746

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：794 / 804

页数：11

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