STRUCTURE AND INTERFACE OXIDATION-STATE OF ZNO R.F. SPUTTERED ONTO SILICON AND SIO2-SI

被引：15

作者：

RAVEN, MS

ALSINAID, MHT

OWEN, SJT

TANSLEY, TL

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

[2] MACQUARIE UNIV,SCH PHYS & MATH,N RYDE,NSW 2113,AUSTRALIA

来源：

THIN SOLID FILMS | 1980年 / 71卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90179-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：23 / 32

页数：10

相关论文

共 15 条

[1] INTEGRATED OPTICAL-SPECTRUM ANALYZER - IMMINENT CHIP
ANDERSON, DB
[J]. IEEE SPECTRUM, 1978, 15 (12) : 22 - 29
[2] ZNO-SI SAW CONVOLVER WITH SURFACE-CONTROLLING JUNCTIONS
ARIMOTO, Y
MORIIZUMI, T
YASUDA, T
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 63 - 65
[3] ZINC-OXIDE-ON-SILICON ACOUSTICALLY SCANNED IMAGER WITH POSITIVE SENSITIVITY AND STORAGE CAPABILITIES
COLDREN, LA
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 6 - 8
[4] JARZEBSKI ZM, 1973, OXIDE SEMICONDUCTORS, P238
[5] STUDIES OF OPTIMUM CONDITIONS FOR GROWTH OF RF-SPUTTERED ZNO FILMS
KHURIYAKUB, BT
KINO, GS
GALLE, P
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3266 - 3272
[6] RF SPUTTERING OF ZNO SHEAR-WAVE TRANSDUCERS
LEHMANN, HW
WIDMER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 3868 - 3879
[7] NONAKA H, 1978, J ELECTRON ENG JPN, V143, P36
[8] QUANTITATIVE SURFACE ANALYSIS BY X-RAY PHOTOELECTRON-SPECTROSCOPY
POWELL, CJ
LARSON, PE
[J]. APPLIED SURFACE SCIENCE, 1978, 1 (02) : 186 - 201
[9] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS
RAIDER, SI
FLITSCH, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 294 - 303
[10] Raven M. S., 1979, Surface and Interface Analysis, V1, P20, DOI 10.1002/sia.740010105