NORMAL INCIDENCE INTERVALENCE SUBBAND ABSORPTION IN GASB QUANTUM-WELL ENHANCED BY COUPLING TO INAS CONDUCTION-BAND

被引：19

作者：

KATZ, J

ZHANG, Y

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.108871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm-1 has been achieved in the wavelength range of 8-17 mum. This is the strongest absorption ever observed among all the IR materials in this wavelength range.

引用

收藏

页码：609 / 611

页数：3

相关论文

共 13 条

[1] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J].

ALTARELLI, M .

PHYSICAL REVIEW B, 1983, 28 (02) :842-845

[2] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[3] SPATIAL SEPARATION OF CARRIERS IN INAS-GASB SUPER-LATTICES [J].

CHANG, LL ;

SAIHALASZ, GA ;

ESAKI, L ;

AGGARWAL, RL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :589-591

[4] NORMAL INCIDENCE INTERSUBBAND OPTICAL-TRANSITION IN GASB/INAS SUPERLATTICES [J].

CHEN, HH ;

HOUNG, MP ;

WANG, YH ;

CHANG, YC .

APPLIED PHYSICS LETTERS, 1992, 61 (05) :509-511

[5] 10-MU-M INFRARED HOT-ELECTRON TRANSISTORS [J].

CHOI, KK ;

DUTTA, M ;

NEWMAN, PG ;

SAUNDERS, ML ;

IAFRATE, GJ .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1348-1350

[6] NORMAL INCIDENCE INFRARED-ABSORPTION FROM INTERSUB-BAND TRANSITIONS IN P-TYPE GALNAS/ALLNAS QUANTUM-WELLS [J].

KATZ, J ;

ZHANG, Y ;

WANG, WI .

ELECTRONICS LETTERS, 1992, 28 (10) :932-934

[7] STRONG 8.2 MU-M INFRARED INTERSUBBAND ABSORPTION IN DOPED GAAS/ALAS QUANTUM-WELL WAVE-GUIDES [J].

LEVINE, BF ;

MALIK, RJ ;

WALKER, J ;

CHOI, KK ;

BETHEA, CG ;

KLEINMAN, DA ;

VANDENBERG, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :273-275

[8] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

CHOI, KK ;

BETHEA, CG ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[9] NORMAL INCIDENCE HOLE INTERSUBBAND ABSORPTION LONG WAVELENGTH GAAS/ALXGA1-XAS QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF ;

GUNAPALA, SD ;

KUO, JM ;

PEI, SS ;

HUI, S .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1864-1866

[10] RESONANT INTERBAND COUPLING IN SINGLE-BARRIER HETEROSTRUCTURES OF INAS/GASB/INAS AND GASB/INAS/GASB [J].

LUO, LF ;

BERESFORD, R ;

LONGENBACH, KF ;

WANG, WI .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2854-2857