RESONANT INTERBAND COUPLING IN SINGLE-BARRIER HETEROSTRUCTURES OF INAS/GASB/INAS AND GASB/INAS/GASB

被引：46

作者：

LUO, LF ^{[1
]}

BERESFORD, R ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 06期

关键词：

D O I：

10.1063/1.346417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm. The peak current density of 4.2 kA cm-2 and the peak voltage of 300 mV are consistent with the interpretation of these experiments as interband coupling between the InAs conduction band and the GaSb valence (light hole) band.

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页码：2854 / 2857

页数：4

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