STRUCTURAL STUDY OF DIAMOND FILM FORMED ON SILICON-WAFER BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION METHOD

被引：30

作者：

YANG, J ^{[1
]}

LIN, ZD ^{[1
]}

WANG, LX ^{[1
]}

JIN, S ^{[1
]}

ZHANG, Z ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very important evidence has been obtained by high-resolution cross-sectional electron microscopy (HREM) that diamond films prepared by the hot-filament chemical vapor deposition (HFCVD) method were grown epitaxially on the mirror-polished Si(100) substrate in a local area with surface biasing pretreatment. There is about a 7.3°angle between Si (100) and D(100) heteroepitaxial crystalline planes. The same type of twinnings (coherent twin boundaries of type, Σ=3) exist on and near the interface. High preferential oriented diamond films have been observed by scanning electron microscopy (SEM). From the discussion, the pretreatment of the substrate is a key factor for the heteroepitaxy of diamond on Si wafer. © 1994 American Institute of Physics.

引用

页码：3203 / 3205

页数：3

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