THE EFFECT OF SUBSTRATE BIAS VOLTAGE ON THE NUCLEATION OF DIAMOND CRYSTALS IN A MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION PROCESS

被引：31

作者：

JIANG, X ^{[1
]}

SIX, R ^{[1
]}

KLAGES, CP ^{[1
]}

ZACHAI, R ^{[1
]}

HARTWEG, M ^{[1
]}

FUSSER, HJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,MAT RES,W-7900 ULM,GERMANY

来源：

关键词：

D O I：

10.1016/0925-9635(93)90092-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films were deposited by microwave plasma chemical vapor deposition onto single-crystal (111), (110) and (100) silicon wafers. The deposition was preceded by an in situ bias pretreatment to enhance the nucleation. The effects of this substrate bias voltage on the nucleation density, orientation of the nuclei, and crystal quality of the diamond films were investigated. The influence of the hydrocarbon fraction of the gas mixture and the substrate temperature on the diamond nucleation under constant bias voltage was also studied.

引用

页码：407 / 412

页数：6

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