FABRICATION AND CHARACTERIZATION OF ALL-REFRACTORY NbCN/Al/AlOx/Al/Nb JUNCTIONS

被引：13

作者：

Barber, Z. H. ^{[1
]}

Blamire, M. G. ^{[1
]}

Somekh, R. E. ^{[1
]}

Evetts, J. E. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

Integrated circuit manufacture - Niobium compounds - Refractory metal compounds - Superconducting materials - Tunnel diodes;

D O I：

10.1109/77.233453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high quality AlOx tunnel barriers on epitaxial niobium carbonitride (NbCN) base layers by the deposition of an Al layer followed by thermal oxidation. By careful control of its uniformity the thickness of the Al layer has been reduced to less than 3 nm which results in an average gap voltage, V-g(NbCN), of up to 2.65 mV. Using a self-aligned whole-wafer processing route we have made high quality NbCN/Al/AlOx/Al/Nb junctions as small as 0.6 mu m(2).

引用

页码：2054 / 2057

页数：4

共 17 条

[1]

Blamire M.G., IN PRESS

[2] CHARACTERISTICS OF VERTICALLY-STACKED PLANAR TUNNEL JUNCTION STRUCTURES [J].

BLAMIRE, MG ;

SOMEKH, RE ;

MORRIS, GW ;

EVETTS, JE .

IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) :1135-1138

[3] A NEW SELF-ALIGNING PROCESS FOR WHOLE-WAFER TUNNEL JUNCTION FABRICATION [J].

BLAMIRE, MG ;

EVETTS, JE ;

HASKO, DG .

IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) :1123-1126

[4] INFLUENCE OF THE BARRIER PREPARATION ON THE QUALITY OF NBN/MGO/NBN JOSEPHSON-JUNCTIONS [J].

DAVID, B ;

DOSSEL, O ;

KURSTEN, G ;

RABE, G .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1991, 4 (09) :409-412

[5] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].

GURVITCH, M ;

WASHINGTON, MA ;

HUGGINS, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474

[6] AN ALL REFRACTORY NBN JOSEPHSON JUNCTION MEDIUM SCALE INTEGRATED-CIRCUIT PROCESS [J].

KERBER, GL ;

COOPER, JE ;

FRY, HW ;

KING, GR ;

MORRIS, RS ;

SPARGO, JW ;

TOTH, AG .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (09) :4853-4860

[7] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS [J].

KROGER, H ;

SMITH, LN ;

JILLIE, DW .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :280-282

[8] ALL REFRACTORY NBN/MGO/NBN TUNNEL-JUNCTIONS [J].

LEDUC, HG ;

STERN, JA ;

THAKOOR, S ;

KHANNA, SK .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :863-865

[9] SUBMICRON AREA NBN/MGO/NBN TUNNEL-JUNCTIONS FOR SIS MIXER APPLICATIONS [J].

LEDUC, HG ;

JUDAS, A ;

CYPHER, SR ;

BUMBLE, B ;

HUNT, BD ;

STERN, JA .

IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :3192-3195

[10] FABRICATION OF ALL-NBN JOSEPHSON TUNNEL-JUNCTIONS USING SINGLE-CRYSTAL NBN FILMS FOR THE BASE ELECTRODES [J].

SHOJI, A .

IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :3184-3187

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