SYNTHESIS OF PBTIO3 THIN-FILMS BY SURFACE-REACTION-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：2

作者：

YAMASHITA, A

TATSUMI, T

MIYANAGA, K

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8A期

关键词：

PBTIO3; MOCVD; HIGH VACUUM; SURFACE REACTION; STEP COVERAGE;

D O I：

10.1143/JJAP.34.4167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Perovskite PbTiO3 thin films were synthesized on Pt/SiO2/Si substrates at substrate temperatures between 500 and 600 degrees C by metal-organic chemical vapor deposition (MOCVD) under high-vacuum conditions using Pb(DPM)(2) (bis-dipivaloylmethanato lead) and Ti(i-OC3H7)(4). Composition and structure of the films were investigated and a significant behavior wherein the obtained film suddenly changed from PbTiO3 to TiO2 with increasing feed rate of the Ti precursor was observed. Surface morphology of the obtained films was flat, suggesting that surface migration Nas important in high-vacuum MOCVD. Good step-coverage was also obtained.

引用

页码：4167 / 4170

页数：4

共 8 条

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