PREPARATION OF TETRAGONAL PEROVSKITE SINGLE-PHASE PBTIO3 FILM USING AN IMPROVED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION METHOD ALTERNATELY INTRODUCING PB AND TI PRECURSORS

Perovskite single-phase PbTiO3 films consisting of both a- and c-axis-oriented grains were prepared on a single-crystalline MgO substrate at a low substrate temperature of 510-degrees-C with an improved MOCVD (metal-organic chemical vapor deposition) method using tetra-ethyl-lead, titanium-iso-propoxide and ozone oxidant. Pb and Ti precursor vapors are alternately introduced into the reactor through different inlets, so that complicated vapor-phase reactions between the precursors and the reactions of which were unavoidable in conventional MOCVD, can be significantly inhibited in the inlet manifold. It is probable that this inhibition contributed to the present accomplishment of low-temperature epitaxial growth since it suppresses the vapor-phase generation of various Ti-Pb intermediates and oxides which are considered to greatly impede the flexibility in epitaxy.