RESISTLESS INVERSE PROJECTION PATTERNING OF ALUMINUM BY USING SYNCHROTRON RADIATION-INDUCED SUPPRESSION OF THERMAL CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

UESUGI, F

NISHIYAMA, I

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90057-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of synchrotron radiation (SR) irradiation on the chemical vapor deposition (CVD) of dimethylaluminum hydride (DMAH) on a Si(100) surface carried out using a molecular-beam CVD technique is studied. The thermal CVD reaction is found to be suppressed almost completely by the SR irradiation. This suppression effect continues even after the irradiation is stopped. Auger analysis reveals that the surface composition of the irradiated area is changed to AlC, while pure aluminum is formed on the non-irradiated area. From these facts, we conclude that the suppression is caused by the very thin reaction blocking layer formed by SR-induced CVD. By using this suppression phenomenon, the inverse projection patterning of Al is successfully demonstrated without photolithography.

引用

页码：284 / 290

页数：7

共 10 条

[1] O-2 GAAS(110) INTERFACE FORMATION AT 20 K - PHOTON-INDUCED REACTION AND DESORPTION [J].