SYNCHROTRON RADIATION ASSISTED DEPOSITION OF CARBON-FILMS

被引:22
作者
OHASHI, H
INOUE, K
SAITO, Y
YOSHIDA, A
OGAWA, H
SHOBATAKE, K
机构
[1] SAGA UNIV,FAC SCI & ENGN,SAGA 840,JAPAN
[2] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
关键词
D O I
10.1063/1.102225
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1644 / 1646
页数:3
相关论文
共 7 条
[1]   LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SI AND GE FILMS BY ULTRAVIOLET-LASER PHOTO-DISSOCIATION OF SILANE AND GERMANE [J].
ANDREATTA, RW ;
ABELE, CC ;
OSMUNDSEN, JF ;
EDEN, JG ;
LUBBEN, D ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :183-185
[2]   BONDING IN HYDROGENATED HARD CARBON STUDIED BY OPTICAL SPECTROSCOPY [J].
DISCHLER, B ;
BUBENZER, A ;
KOIDL, P .
SOLID STATE COMMUNICATIONS, 1983, 48 (02) :105-108
[3]  
EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718
[4]  
KOCH EE, 1976, INT J RADIAT PHYS CH, V31, P187
[5]   SYNCHROTRON RADIATION-EXCITED CHEMICAL VAPOR-DEPOSITION OF SIXNYHZ FILM [J].
KYURAGI, H ;
URISU, T .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2035-2037
[6]   SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR DEPOSITION AND ETCHING [J].
URISU, T ;
KYURAGI, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1436-1440
[7]  
1988, UVSOR16 ACT REP, P137