A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON

被引：18

作者：

ONEILL, AG

HILL, C

KING, J

PLEASE, C

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

[2] UNIV OXFORD,INST MATH,OXFORD OX1 3LB,ENGLAND

[3] UNIV READING,DEPT MATH,READING RG6 2AX,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：167 / 174

页数：8

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