DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON

被引：77

作者：

SWAMINATHAN, B ^{[1
]}

SARASWAT, KC ^{[1
]}

DUTTON, RW ^{[1
]}

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：795 / 798

页数：4

共 12 条

[1] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
OLOFSEN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &
[2] DIFFUSION MODEL FOR ARSENIC IN SILICON
CHIU, TL
GHOSH, HN
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 472 - &
[3] Gjostein N. A., 1973, DIFFUSION, P241
[4] INFLUENCE OF DISLOCATIONS ON DIFFUSION KINETICS IN SOLIDS WITH PARTICULAR REFERENCE TO ALKALI HALIDES
HARRISON, LG
[J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1961, 57 (08): : 1191 - &
[5] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902
[6] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON
KAMINS, TI
MANOLIU, J
TUCKER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 83 - &
[7] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
KAMINS, TI
MANDURAH, MM
SARASWAT, KC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932
[8] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON
MANDURAH, MM
SARASWAT, KC
HELMS, CR
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763
[9] ARSENIC-IMPLANTED POLYSILICON LAYERS
RYSSEL, H
IBERL, H
BLEIER, M
PRINKE, G
HABERGER, K
KRANZ, H
[J]. APPLIED PHYSICS, 1981, 24 (03): : 197 - 200
[10] SEGREGATION OF ARSENIC TO THE GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
SWAMINATHAN, B
DEMOULIN, E
SIGMON, TW
DUTTON, RW
REIF, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2227 - 2229

← 1 2 →