ARSENIC-IMPLANTED POLYSILICON LAYERS

被引：29

作者：

RYSSEL, H

IBERL, H

BLEIER, M

PRINKE, G

HABERGER, K

KRANZ, H

机构：

来源：

APPLIED PHYSICS | 1981年 / 24卷 / 03期

关键词：

D O I：

10.1007/BF00899755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：197 / 200

页数：4

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