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ARSENIC-IMPLANTED POLYSILICON LAYERS
被引:29
作者
:
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
RYSSEL, H
IBERL, H
论文数:
0
引用数:
0
h-index:
0
IBERL, H
BLEIER, M
论文数:
0
引用数:
0
h-index:
0
BLEIER, M
PRINKE, G
论文数:
0
引用数:
0
h-index:
0
PRINKE, G
HABERGER, K
论文数:
0
引用数:
0
h-index:
0
HABERGER, K
KRANZ, H
论文数:
0
引用数:
0
h-index:
0
KRANZ, H
机构
:
来源
:
APPLIED PHYSICS
|
1981年
/ 24卷
/ 03期
关键词
:
D O I
:
10.1007/BF00899755
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:197 / 200
页数:4
相关论文
共 18 条
[1]
MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS
BARNOSKI, MK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
BARNOSKI, MK
LOPER, DD
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOPER, DD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(04)
: 441
-
&
[2]
ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES
BARNOSKI, MK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
BARNOSKI, MK
LOPER, DD
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOPER, DD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(04)
: 433
-
&
[3]
Chu W.K., 1977, BACKSCATTERING SPECT
[4]
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[5]
INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR
DEMAN, HJJ
论文数:
0
引用数:
0
h-index:
0
DEMAN, HJJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 833
-
+
[6]
HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GRAUL, J
GLASL, A
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GLASL, A
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
MURRMANN, H
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
: 491
-
495
[7]
BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
GRAUL, J
KAISER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
KAISER, H
WILHELM, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
WILHELM, WJ
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
RYSSEL, H
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(04)
: 201
-
204
[8]
GRAUL J, 1975, IEDM, P450
[9]
GRAUL J, UNPUBLISHED
[10]
ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA
JAIN, RK
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
JAIN, RK
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
VANOVERSTRAETEN, RJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(04)
: 552
-
557
←
1
2
→
共 18 条
[1]
MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS
BARNOSKI, MK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
BARNOSKI, MK
LOPER, DD
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOPER, DD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(04)
: 441
-
&
[2]
ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES
BARNOSKI, MK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
BARNOSKI, MK
LOPER, DD
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
LOPER, DD
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(04)
: 433
-
&
[3]
Chu W.K., 1977, BACKSCATTERING SPECT
[4]
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[5]
INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR
DEMAN, HJJ
论文数:
0
引用数:
0
h-index:
0
DEMAN, HJJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 833
-
+
[6]
HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GRAUL, J
GLASL, A
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GLASL, A
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
MURRMANN, H
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
: 491
-
495
[7]
BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
GRAUL, J
KAISER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
KAISER, H
WILHELM, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
WILHELM, WJ
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,MUNICH,FED REP GER
RYSSEL, H
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(04)
: 201
-
204
[8]
GRAUL J, 1975, IEDM, P450
[9]
GRAUL J, UNPUBLISHED
[10]
ACCURATE THEORETICAL ARSENIC DIFFUSION PROFILES IN SILICON FROM PROCESSING DATA
JAIN, RK
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
JAIN, RK
VANOVERSTRAETEN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
KATHOLIEKE UNIV LEUVEN,DEPT ELEKTROTECH,LAB FYS & ELEKTR HALFGELEIDERS,KARDINAAL MERCIERLAAN 94,3030 HEVERLE,BELGIUM
VANOVERSTRAETEN, RJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(04)
: 552
-
557
←
1
2
→