LOW-TEMPERATURE GROWTH OF ZNSE/GAAS USING POST-HEATED MOLECULAR-BEAMS

被引：7

作者：

OHISHI, M

SAITO, H

FUJISAKI, Y

TORIHARA, H

ABLET, I

机构：

[1] Department of Applied Physics, Okayama University of Science, Okayama, 700

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6A期

关键词：

MOLECULAR-BEAM EPITAXY; POST-HEATED MOLECULAR BEAM; LOW-TEMPERATURE GROWTH; SURFACE MORPHOLOGY; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.30.L1042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100-degrees-C using the molecular beams post-heated at 600-degrees-C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150-degrees-C showed the strong I2 bound exciton line and almost no other luminescence such as donor-acceptor pair, Y, S and deep emission at 4 K.

引用

页码：L1042 / L1044

页数：3

共 8 条

[1] LOW-TEMPERATURE GROWTH OF ZNSE BY MOLECULAR-BEAM EPITAXY USING CRACKED SELENIUM [J].