STRUCTURE OF GAAS = GASB INCOHERENT INTERFACE AFTER EPITAXIAL-GROWTH

被引：40

作者：

BOURRET, A ^{[1
]}

FUOSS, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of GaAs = GaSb (001) incoherent interface has been studied by grazing incidence x-ray scattering. The interface is periodic with a square array of edge dislocations. It is shown that the interface is nonplanar with 2-4 GaAs monolayers protruding in the GaSb epilayer at the dislocation core. This corrugated interface does not increase the strain energy by a large factor. Two possible mechanisms are suggested for the interface formation of large misfit epitactic growth: a stress induced mechanism or the presence of an ordered intermediate 2D layer.

引用

页码：1034 / 1036

页数：3

共 12 条

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