MOCVD LAYER GROWTH OF ZNSE USING A NEW ZINC SOURCE

被引：23

作者：

WRIGHT, PJ ^{[1
]}

COCKAYNE, B ^{[1
]}

WILLIAMS, AJ ^{[1
]}

JONES, AC ^{[1
]}

ORRELL, ED ^{[1
]}

机构：

[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

ZINC COMPOUNDS;

D O I：

10.1016/0022-0248(87)90287-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is shown that the adduct dimethyl zinc (1,4-dioxan) can be used successfully as the zinc source in reaction with hydrogen selenide to grow single crystal layers of ZnSe on to (100) GaAs substrates by MOCVD in the temperature range 200-550 degree C. Comparison with ZnSe layers grown using other reactants is also made.

引用

页码：552 / 554

页数：3

共 11 条

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