ANALYSIS OF THE EXCITON LUMINESCENCE OF SILICON FOR CHARACTERIZATION OF THE CONTENT OF IMPURITIES

被引：55

作者：

NAKAYAMA, H

NISHINO, T

HAMAKAWA, Y

机构：

[1] Osaka University, Toyonaka, Osaka, 560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期

关键词：

D O I：

10.1143/JJAP.19.501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 511

页数：11

共 28 条

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