INFLUENCE OF DEFECT PHONON MODES ON HOPPING CONDUCTION .2. NUMERICAL RESULTS

[11] PHONON-ASSISTED HOPPING DUE TO INTERACTION WITH BOTH ACOUSTICAL AND OPTICAL PHONONS [J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3667 - 3680

[12] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J]. PHYSICAL REVIEW B, 1973, 8 (02) : 607 - 615

[13] ELECTRONIC CONDUCTION IN AMORPHOUS SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 135 - &

[14] HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1758 - 1769

[15] ELASTIC MODULI OF DIAMOND [J]. PHYSICAL REVIEW, 1957, 105 (01): : 116 - 121

[16] LOCALIZED CONDUCTION PROCESSES IN AMORPHOUS GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (183): : 661 - &

[17] Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[18] 2-PHONON TRANSITIONS IN IMPURITY CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 46 - &

[19] PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 364 - &

[20] EVALUATION OF MOTTS PARAMETERS FOR HOPPING CONDUCTION IN AMORPHOUS GE, SI, AND SE-SI [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (16) : 1000 - 1003

[11] PHONON-ASSISTED HOPPING DUE TO INTERACTION WITH BOTH ACOUSTICAL AND OPTICAL PHONONS [J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3667 - 3680

[12] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J]. PHYSICAL REVIEW B, 1973, 8 (02) : 607 - 615

[13] ELECTRONIC CONDUCTION IN AMORPHOUS SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 135 - &

[14] HOPPING CONDUCTION IN SEMICONDUCTING DIAMOND [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1758 - 1769

[15] ELASTIC MODULI OF DIAMOND [J]. PHYSICAL REVIEW, 1957, 105 (01): : 116 - 121

[16] LOCALIZED CONDUCTION PROCESSES IN AMORPHOUS GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (183): : 661 - &

[17] Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[18] 2-PHONON TRANSITIONS IN IMPURITY CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 125 (01): : 46 - &

[19] PHONON DISPERSION RELATIONS IN GE AT 80 DEGREES K [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 364 - &

[20] EVALUATION OF MOTTS PARAMETERS FOR HOPPING CONDUCTION IN AMORPHOUS GE, SI, AND SE-SI [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (16) : 1000 - 1003