SCANNING TUNNELING MICROSCOPE STUDY OF THE STRUCTURAL TRANSFORMATION OF THE SI(111)7X7 SURFACE TO THE NA-INDUCED 3X1 SURFACE

被引:15
作者
JEON, DR
HASHIZUME, T
WANG, XD
BAI, CL
MOTAI, K
SAKURAI, T
机构
[1] Institute for Materials Research (IMR), Tohoku University, Sendai
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期
关键词
STM; SI(111); ALKALI METAL; NA ADSORPTION; EPITAXIAL GROWTH;
D O I
10.1143/JJAP.31.L501
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structure of the Na-induced Si(111) 3 x 1 surface has been studied using a field-ion-scanning-tunneling-microscope. The STM images showed that the entire Si surface was uniformly covered with a single layer of atomically resolved Na 3 x 1 structure. Upon annealing, the Na layer peeled off gradually, revealing the underlying Si substrate, which exhibited various intermediate reconstructions such as 2 x 2, 5 x 5, and 9 x 9 before the 7 x 7 structure was restored at 800-degrees-C. Our observations suggest that the top layer of the Si substrate converts to the bulk terminated 1 x 1 structure upon Na deposition and annealing.
引用
收藏
页码:L501 / L504
页数:4
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