SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF MONOLAYER STEPS ON GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：19

作者：

KASU, M

KOBAYASHI, N

YAMAGUCHI, H

机构：

[1] NTT Basic Research Laboratories, Musashino, Tokyo 180

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using scanning tunneling microscopy (STM), we have observed monolayer steps for the first time on (001) GaAs vicinal surfaces grown by metalorganic chemical vapor deposition (MOCVD). The surface was passivated with As to protect it from air during the transfer from the MOCVD to the STM. We found that the monolayer step edges on the surface misoriented in the [110] direction undulate with about 2 times larger amplitude than the surface misoriented in the [110BAR] direction.

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页码：678 / 680

页数：3

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