MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY

被引：58

作者：

KASU, M

FUKUI, T

机构：

[1] NTT Basic Research Laboratories, Musashino, Tokyo, 180

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 7A期

关键词：

MULTIATOMIC STEP; STEP BUNCHING; MOCVD; AFM; GAAS; VICINAL SURFACE;

D O I：

10.1143/JJAP.31.L864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied MOCVD-grown GaAs (001) vicinal surfaces by atomic force microscopy (AFM) and observed multi-atomic steps (multisteps) of several-monolayers height. The multisteps become straight as the AsH3 partial pressure increases and when the misorientation direction is [110BAR]. As growth proceeds, first, multisteps, i.e., step bunches, form and then the average distance between multisteps saturates. The multistep straightening and the multistep formation mechanisms are discussed

引用

页码：L864 / L866

页数：3

共 15 条

[1] RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY
BIEGELSEN, DK
BRINGANS, RD
NORTHRUP, JE
SWARTZ, LE
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (04) : 452 - 455
[2] BIEGELSEN DK, 1991, PHYS REV LETT, V67, P2697
[3] A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (100) GAAS VICINAL SURFACES
CHALMERS, SA
GOSSARD, AC
PETROFF, PM
GAINES, JM
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1357 - 1362
[4] (ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1373 - 1377
[5] STEP-FLOW GROWTH AND FRACTIONAL-LAYER SUPERLATTICES ON GAAS VICINAL SURFACES BY MOCVD
FUKUI, T
SAITO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 61 - 64
[6] NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (03): : L483 - L485
[7] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
GAINES, JM
PETROFF, PM
KROEMER, H
SIMES, RJ
GEELS, RS
ENGLISH, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
[8] ARSENIC DIMERS AND MULTILAYERS ON (001)GAAS SURFACES IN ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KAMIYA, I
TANAKA, H
ASPNES, DE
FLOREZ, LT
COLAS, E
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (10) : 1238 - 1240
[9] ELECTRON COUNTING MODEL AND ITS APPLICATION TO ISLAND STRUCTURES ON MOLECULAR-BEAM EPITAXY GROWN GAAS(001) AND ZNSE(001)
PASHLEY, MD
[J]. PHYSICAL REVIEW B, 1989, 40 (15): : 10481 - 10487
[10] THE MEANDERING OF STEPS ON GAAS(100)
PUKITE, PR
PETRICH, GS
BATRA, S
COHEN, PI
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 269 - 272

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